IRFSL3004PBF

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

9200pF @ 25V

Seri

HEXFET®

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Radyasyon Dayanımı

No

Fall Time Typ

130 ns

Transistor Element Material

SILICON

Fet Type

N-Channel

Power Dissipation Max

380W Tc

Vgs Max

±20V

Current Continuous Drain Id25

195A Ta

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

240nC @ 10V

RoHS Durumu

RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.65mm

Power Dissipation

380W

Montaj Tipi

Through Hole

Turn On Delay Time

23 ns

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

Genişlik

4.83mm

Drain To Source Breakdown Voltage

40V

Rds On Max Id Vgs

1.75m Ω @ 195A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Ambalaj

Tube

Turn Off Delay Time

90 ns

Element Configuration

Single

Rise Time

220ns

Transistor Application

SWITCHING

Case Connection

DRAIN

Yayın Yılı

2004

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.67mm

Pin Sayısı

3

Continuous Drain Current Id

340A

ECCN Kodu

EAR99

Number Of Elements

1