
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 52 ns
- Input Capacitance Ciss Max Vds
- 13703pF @ 25V
- Transistor Element Material
- SILICON
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 195A
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Vgs Max
- ±20V
- Pulsed Drain Currentmax Idm
- 760A
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Rds On Max Id Vgs
- 2m Ω @ 100A, 10V
- Number Of Elements
- 1
- Turn Off Delay Time
- 172 ns
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Drainsource On Resistancemax
- 0.002Ohm
- Power Dissipation
- 375W
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Seri
- HEXFET®, StrongIRFET™
- Power Dissipation Max
- 375W Tc
- Genişlik
- 9.65mm
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Yükseklik
- 4.83mm
- Threshold Voltage
- 3.7V
- Element Configuration
- Single
- Terminal Sayısı
- 2
- Jesd30 Code
- R-PSSO-G2
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Montaj
- Surface Mount
- Vgsth Max Id
- 3.7V @ 250μA
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Fall Time Typ
- 104 ns
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- Rise Time
- 141ns
- Number Of Channels
- 1
- Montaj Tipi
- Surface Mount
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