IRFS7440TRLPBF

Specifications

Seri

HEXFET®, StrongIRFET™

Drain To Source Breakdown Voltage

40V

Power Dissipation Max

208W Tc

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Currentmax Abs Id

208A

Genişlik

9.65mm

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Power Dissipation

208W

Pulsed Drain Currentmax Idm

772A

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Turn Off Delay Time

115 ns

Rds On Max Id Vgs

2.5m Ω @ 100A, 10V

Number Of Elements

1

Input Capacitance Ciss Max Vds

4730pF @ 25V

Turn On Delay Time

24 ns

Terminal Formu

GULL WING

Nominal Vgs

3 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Case Connection

DRAIN

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

10.67mm

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Yayın Yılı

2008

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

135nC @ 10V

Current Continuous Drain Id25

120A Tc

Parça Durumu

Active

Fall Time Typ

68 ns

Drive Voltage Max Rds On Min Rds On

6V 10V