IRFS59N10DPBF

Specifications

Gate Charge Qg Max Vgs

114nC @ 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

5.5V @ 250μA

Current Continuous Drain Id25

59A Tc

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

2450pF @ 25V

Yayın Yılı

2000

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

25m Ω @ 35.4A, 10V

Fabrika Tedarik Süresi

52 Weeks

Seri

HEXFET®

Parça Durumu

Discontinued

Fet Type

N-Channel

Power Dissipation Max

3.8W Ta 200W Tc

Drain To Source Voltage Vdss

100V

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±30V

Ambalaj

Tube