IRFS4620TRLPBF

Specifications

Vgs Max

±20V

Pulsed Drain Currentmax Idm

100A

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

77.5m Ω @ 15A, 10V

Number Of Elements

1

Turn Off Delay Time

25.4 ns

Input Capacitance Ciss Max Vds

1710pF @ 50V

Turn On Delay Time

13.4 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

24A

Case Connection

DRAIN

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Seri

HEXFET®

Drain To Source Breakdown Voltage

200V

Power Dissipation Max

144W Tc

Genişlik

4.826mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.0775Ohm

Power Dissipation

144W

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

14.8 ns

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Rise Time

22.4ns

Montaj Tipi

Surface Mount

Yükseklik

9.65mm

Element Configuration

Single

Terminal Sayısı

2

Montaj

Surface Mount, Through Hole

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgsth Max Id

5V @ 100μA