IRFS4615TRLPBF

Specifications

Current Continuous Drain Id25

33A Tc

Gate Charge Qg Max Vgs

40nC @ 10V

Yayın Yılı

2008

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Uzunluk

10.668mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

30

Fet Type

N-Channel

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Terminal Sayısı

2

Vgsth Max Id

5V @ 100μA

Element Configuration

Single

Yükseklik

4.826mm

Rise Time

35ns

Montaj Tipi

Surface Mount

Fall Time Typ

20 ns

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Drainsource On Resistancemax

0.042Ohm

Power Dissipation

144W

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Genişlik

9.65mm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

144W Tc

Drain To Source Breakdown Voltage

150V

Seri

HEXFET®

Case Connection

DRAIN

Continuous Drain Current Id

33A

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~175°C TJ