IRFS4610PBF

Specifications

Vgs Max

±20V

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

290A

Number Of Elements

1

Rds On Max Id Vgs

14m Ω @ 44A, 10V

Turn Off Delay Time

53 ns

Input Capacitance Ciss Max Vds

3550pF @ 50V

Turn On Delay Time

18 ns

Continuous Drain Current Id

73A

Case Connection

DRAIN

Transistor Element Material

SILICON

Nominal Vgs

4 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Formu

GULL WING

Ambalaj

Tube

Power Dissipation Max

190W Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Genişlik

9.65mm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application

SWITCHING

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant

Radyasyon Dayanımı

No

Power Dissipation

190W

Dual Supply Voltage

100V

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

70 ns

Recovery Time

53 ns

Parça Durumu

Obsolete

Rise Time

87ns

Montaj Tipi

Surface Mount

Direnç

14mOhm

Element Configuration

Single

Yükseklik

4.826mm

Voltage Rated Dc

100V

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Terminal Sayısı

2