IRFS4410TRLPBF

Specifications

Power Dissipation

200W

Kurşunsuz

Contains Lead

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Genişlik

9.65mm

Drain Currentmax Abs Id

75A

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Power Dissipation Max

200W Tc

Transistor Element Material

SILICON

Continuous Drain Current Id

96A

Case Connection

DRAIN

Terminal Formu

GULL WING

Nominal Vgs

4 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

5150pF @ 50V

Turn On Delay Time

24 ns

Rds On Max Id Vgs

10m Ω @ 58A, 10V

Number Of Elements

1

Turn Off Delay Time

55 ns

Vgs Max

±20V

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Current Continuous Drain Id25

88A Tc

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

180nC @ 10V

Yayın Yılı

2007

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

10.668mm

Tepe Reflow Süresi (maks. sn)

30

Akım Değeri

96A

Fet Type

N-Channel

Terminal Sayısı

2