Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- TO-263-7, D2Pak (6 Leads + Tab)
- Weight
- 1.59999g
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 12 Weeks
- Power Dissipation Max
- 350W Tc
- Fet Type
- N-Channel
- Drain To Source Voltage Vdss
- 150V
- Seri
- HEXFET®
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Current Continuous Drain Id25
- 86A Tc
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2013
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 25 ns
- Number Of Elements
- 1
- Number Of Channels
- 1
- Rds On Max Id Vgs
- 14.7m Ω @ 34A, 10V
- Rise Time
- 60ns
- Gate To Source Voltage Vgs
- 30V
- Pin Sayısı
- 7
- Pulsed Drain Currentmax Idm
- 343A
- Parça Durumu
- Active
- Vgs Max
- ±30V
- Fall Time Typ
- 35 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Vgsth Max Id
- 5V @ 250μA
- Terminal Formu
- GULL WING
- Case Connection
- DRAIN
- Jesd30 Code
- R-PSSO-G6
- Continuous Drain Current Id
- 86A
- Montaj
- Surface Mount
- Transistor Element Material
- SILICON
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