Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 12 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.668mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 30
- Akım Değeri
- 140A
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 130A Tc
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 250nC @ 10V
- Yayın Yılı
- 2006
- ECCN Kodu
- EAR99
- Rise Time
- 110ns
- Direnç
- 7MOhm
- Montaj Tipi
- Surface Mount
- Fall Time Typ
- 78 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- Recovery Time
- 68 ns
- Terminal Sayısı
- 2
- Jesd30 Code
- R-PSSO-G2
- Montaj
- Surface Mount
- Vgsth Max Id
- 4V @ 250μA
- Yükseklik
- 4.826mm
- Threshold Voltage
- 4V
- Avalanche Energy Rating Eas
- 980 mJ
- Element Configuration
- Single
- Voltage Rated Dc
- 100V
- Drain Currentmax Abs Id
- 75A
- Genişlik
- 9.65mm
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Drain To Source Breakdown Voltage
- 100V
- Seri
- HEXFET®
- Power Dissipation Max
- 300W Tc
- Terminal
- SMD/SMT
- Dual Supply Voltage
- 100V
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