Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- Not Qualified
- Gate Charge Qg Max Vgs
- 98nC @ 10V
- Current Continuous Drain Id25
- 62A Tc
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2004
- Uzunluk
- 10.668mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 12 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- 30
- Vgsth Max Id
- 5V @ 250μA
- Terminal Sayısı
- 2
- Jesd30 Code
- R-PSSO-G2
- Montaj
- Surface Mount
- Yükseklik
- 4.826mm
- Element Configuration
- Single
- Direnç
- 26MOhm
- Montaj Tipi
- Surface Mount
- Rise Time
- 20ns
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- Fall Time Typ
- 31 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Power Dissipation
- 330W
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Genişlik
- 9.65mm
- Drain To Source Breakdown Voltage
- 200V
- Seri
- HEXFET®
- Power Dissipation Max
- 330W Tc
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e3
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -40°C~175°C TJ
- Transistor Element Material
- SILICON
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 62A
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