IRFS41N15DPBF

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Discontinued

Pulsed Drain Currentmax Idm

164A

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±30V

Additional Feature

AVALANCHE RATED

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

45m Ω @ 25A, 10V

Number Of Elements

1

Input Capacitance Ciss Max Vds

2520pF @ 25V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

470 mJ

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

5.5V @ 250μA

Transistor Element Material

SILICON

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection

DRAIN

Seri

HEXFET®

Power Dissipation Max

3.1W Ta

Fet Type

N-Channel

Drain To Source Voltage Vdss

150V

JESD-609 Kodu

e3

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

30

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ds Breakdown Voltagemin

150V

Drain Currentmax Abs Id

41A

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Yayın Yılı

2003

Gate Charge Qg Max Vgs

110nC @ 10V

Qualification Status

Not Qualified