IRFS4115TRL7PP

Specifications

Yayın Yılı

2008

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

105A Tc

Drainsource On Resistancemax

0.0118Ohm

Gate Charge Qg Max Vgs

110nC @ 10V

Power Dissipation

380W

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®

Drain To Source Breakdown Voltage

150V

Power Dissipation Max

380W Tc

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

5320pF @ 50V

Turn On Delay Time

18 ns

Avalanche Energy Rating Eas

230 mJ

Terminal Pozisyonu

SINGLE

HTS Kodu

8541.29.00.95

Terminal Sayısı

6

Transistor Element Material

SILICON

Montaj

Surface Mount

Continuous Drain Current Id

105A

Jesd30 Code

R-PSSO-G6

Case Connection

DRAIN

Terminal Formu

GULL WING

Vgsth Max Id

5V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

23 ns

Vgs Max

±20V

Parça Durumu

Active

Pulsed Drain Currentmax Idm

420A

Pin Sayısı

7

Gate To Source Voltage Vgs

20V