IRFS4010TRLPBF

Specifications

Drainsource On Resistancemax

0.0047Ohm

Power Dissipation

375W

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Genişlik

9.65mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

100V

Seri

HEXFET®

Power Dissipation Max

375W Tc

Transistor Element Material

SILICON

Case Connection

DRAIN

Continuous Drain Current Id

180A

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Nominal Vgs

4 V

Turn On Delay Time

21 ns

Input Capacitance Ciss Max Vds

9575pF @ 50V

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

4.7m Ω @ 106A, 10V

Number Of Elements

1

Turn Off Delay Time

100 ns

Vgs Max

±20V

Pulsed Drain Currentmax Idm

720A

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Current Continuous Drain Id25

180A Tc

Gate Charge Qg Max Vgs

215nC @ 10V

Reach Svhc

No SVHC

Yayın Yılı

2011

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.668mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

30