Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- 30
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 10.67mm
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2005
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 230nC @ 10V
- Current Continuous Drain Id25
- 190A Tc
- Parça Durumu
- Discontinued
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fall Time Typ
- 48 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj Tipi
- Surface Mount
- Rise Time
- 56ns
- Yükseklik
- 4.55mm
- Element Configuration
- Single
- Avalanche Energy Rating Eas
- 330 mJ
- Threshold Voltage
- 4V
- Vgsth Max Id
- 4V @ 250μA
- Terminal Sayısı
- 6
- Montaj
- Surface Mount
- Jesd30 Code
- R-PSSO-G6
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 100V
- Power Dissipation Max
- 380W Tc
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Genişlik
- 9.65mm
- Reverse Recovery Time
- 60 ns
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Dual Supply Voltage
- 100V
- Power Dissipation
- 380W
- Drainsource On Resistancemax
- 0.004Ohm
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