IRFS3806TRLPBF

Specifications

Uzunluk

10.668mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Genişlik

9.65mm

Fet Type

N-Channel

Power Dissipation Max

71W Tc

Drain To Source Breakdown Voltage

60V

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Power Dissipation

71W

Gate Charge Qg Max Vgs

30nC @ 10V

Current Continuous Drain Id25

43A Tc

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Yayın Yılı

2008

Montaj Tipi

Surface Mount

Turn Off Delay Time

49 ns

Number Of Elements

1

Rds On Max Id Vgs

15.8m Ω @ 25A, 10V

Rise Time

40ns

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Parça Durumu

Active

Vgs Max

±20V

Fall Time Typ

47 ns

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 50μA

Terminal Formu

GULL WING

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Montaj

Surface Mount

Continuous Drain Current Id

43A

Transistor Element Material

SILICON

Terminal Sayısı

2