IRFS3307TRLPBF

Specifications

Turn On Delay Time

26 ns

Input Capacitance Ciss Max Vds

5150pF @ 50V

Transistor Element Material

SILICON

Case Connection

DRAIN

Continuous Drain Current Id

120A

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Rds On Max Id Vgs

6.3m Ω @ 75A, 10V

Number Of Elements

1

Turn Off Delay Time

51 ns

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Power Dissipation

200W

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

75V

Seri

HEXFET®

Power Dissipation Max

200W Tc

Genişlik

9.65mm

Drain Currentmax Abs Id

75A

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Yükseklik

4.572mm

Avalanche Energy Rating Eas

270 mJ

Element Configuration

Single

Terminal Sayısı

2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Vgsth Max Id

4V @ 150μA

Fall Time Typ

63 ns

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Not For New Designs

Rise Time

120ns

Direnç

6.3MOhm