IRFS3207ZTRRPBF

Specifications

Power Dissipation

300W

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

170nC @ 10V

Drainsource On Resistancemax

0.0041Ohm

Current Continuous Drain Id25

120A Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Yayın Yılı

2006

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Power Dissipation Max

300W Tc

Fet Type

N-Channel

Drain To Source Breakdown Voltage

75V

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 150μA

Terminal Formu

GULL WING

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Continuous Drain Current Id

120A

Montaj

Surface Mount

Transistor Element Material

SILICON

Terminal Sayısı

2

Element Configuration

Single

Avalanche Energy Rating Eas

170 mJ

Input Capacitance Ciss Max Vds

6920pF @ 50V

Montaj Tipi

Surface Mount

Number Of Elements

1

Rds On Max Id Vgs

4.1m Ω @ 75A, 10V

Rise Time

68ns

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260