Volume pricing
- 1+ pcs$2.38
- 10+ pcs$2.24
- 100+ pcs$2.12
- 500+ pcs$2.00
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- 75V
- Element Configuration
- Single
- Threshold Voltage
- 4V
- Yükseklik
- 4.826mm
- Vgsth Max Id
- 4V @ 250μA
- Montaj
- Surface Mount
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Jesd30 Code
- R-PSSO-G2
- Terminal Sayısı
- 2
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 74 ns
- Montaj Tipi
- Surface Mount
- Direnç
- 4.5MOhm
- Rise Time
- 120ns
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2006
- Gate Charge Qg Max Vgs
- 260nC @ 10V
- Reach Svhc
- No SVHC
- Current Continuous Drain Id25
- 170A Tc
- Fet Type
- N-Channel
- Akım Değeri
- 180A
- Tepe Reflow Süresi (maks. sn)
- 30
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 10.668mm
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 7600pF @ 50V
- Turn On Delay Time
- 29 ns
- Nominal Vgs
- 4 V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 180A
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Pulsed Drain Currentmax Idm
- 720A
- Vgs Max
- ±20V
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