IRFS3206TRRPBF

Specifications

Tepe Reflow Süresi (maks. sn)

30

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

10.668mm

Yayın Yılı

2004

ECCN Kodu

EAR99

Current Continuous Drain Id25

120A Tc

Gate Charge Qg Max Vgs

170nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

83 ns

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Rise Time

82ns

Montaj Tipi

Surface Mount

Yükseklik

4.826mm

Element Configuration

Single

Terminal Sayısı

2

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgsth Max Id

4V @ 150μA

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®

Drain To Source Breakdown Voltage

60V

Power Dissipation Max

300W Tc

Genişlik

9.65mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Power Dissipation

300W

Vgs Max

±20V

Pulsed Drain Currentmax Idm

840A

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

3m Ω @ 75A, 10V