IRFS31N20DTRL

Specifications

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®

Akım Değeri

31A

Fet Type

N-Channel

Power Dissipation Max

3.1W Ta 200W Tc

Current Continuous Drain Id25

31A Tc

Drainsource On Resistancemax

0.082Ohm

Gate Charge Qg Max Vgs

110nC @ 10V

Yayın Yılı

2000

ECCN Kodu

EAR99

Kurşunsuz

Contains Lead

RoHS Durumu

Non-RoHS Compliant

Configuration

SINGLE

Rise Time

38ns

Rds On Max Id Vgs

82m Ω @ 18A, 10V

Number Of Elements

1

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±30V

Pulsed Drain Currentmax Idm

124A

Parça Durumu

Obsolete

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

2

Transistor Element Material

SILICON

Continuous Drain Current Id

31A

Montaj

Surface Mount

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Terminal Formu

GULL WING

Vgsth Max Id

5.5V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

2370pF @ 25V

Avalanche Energy Rating Eas

420 mJ

Terminal Pozisyonu

SINGLE

Voltage Rated Dc

200V