IRFS3004TRL7PP

Specifications

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

40V

Seri

HEXFET®

Fet Type

N-Channel

Power Dissipation Max

380W Tc

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Yayın Yılı

2010

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Current Continuous Drain Id25

240A Tc

Gate Charge Qg Max Vgs

240nC @ 10V

Reach Svhc

No SVHC

Power Dissipation

380W

Fall Time Typ

160 ns

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±20V

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Pin Sayısı

7

Rds On Max Id Vgs

1.25m Ω @ 195A, 10V

Rise Time

240ns

Number Of Elements

1

Turn Off Delay Time

91 ns

Direnç

1.25MOhm

Montaj Tipi

Surface Mount

Turn On Delay Time

23 ns

Input Capacitance Ciss Max Vds

9130pF @ 25V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

290 mJ

Transistor Element Material

SILICON

Terminal Sayısı

6

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G6