IRFR9N20DTRPBF

Specifications

Power Dissipation

86W

Dual Supply Voltage

200V

Terminal

SMD/SMT

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

Genişlik

6.22mm

Power Dissipation Max

86W Tc

Drain To Source Breakdown Voltage

200V

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Nominal Vgs

5.5 V

Terminal Formu

GULL WING

Case Connection

DRAIN

Continuous Drain Current Id

9.4A

Transistor Element Material

SILICON

Turn On Delay Time

7.5 ns

Input Capacitance Ciss Max Vds

560pF @ 25V

Turn Off Delay Time

13 ns

Number Of Elements

1

Rds On Max Id Vgs

380m Ω @ 5.6A, 10V

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Vgs Max

±30V

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

27nC @ 10V

Current Continuous Drain Id25

9.4A Tc

Jedec95 Code

TO-252AA

ECCN Kodu

EAR99

Yayın Yılı

2004

Uzunluk

6.7056mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

14 Weeks

Fet Type

N-Channel

Akım Değeri

9.4A