IRFR5410TR

Specifications

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

13A

Ds Breakdown Voltagemin

100V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation Max

66W Tc

Fet Type

P-Channel

Drain To Source Voltage Vdss

100V

Seri

HEXFET®

Drainsource On Resistancemax

0.205Ohm

Current Continuous Drain Id25

13A Tc

Gate Charge Qg Max Vgs

58nC @ 10V

Qualification Status

Not Qualified

Yayın Yılı

1999

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Durumu

Non-RoHS Compliant

Jedec95 Code

TO-252AA

ECCN Kodu

EAR99

Number Of Elements

1

Rds On Max Id Vgs

205m Ω @ 7.8A, 10V

Montaj Tipi

Surface Mount

Vgs Max

±20V

Additional Feature

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Obsolete

Pulsed Drain Currentmax Idm

52A

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

4V @ 250μA

Terminal Formu

GULL WING