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IRFR540ZTRPBF

Infineon Technologies

IRFR540ZTRPBF

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Tepe Reflow Süresi (maks. sn)
30
Fet Type
N-Channel
Fabrika Tedarik Süresi
12 Weeks
Operating Mode
ENHANCEMENT MODE
Nem Hassasiyeti (MSL)
1 (Unlimited)
Uzunluk
6.7056mm
Yayın Yılı
2004
ECCN Kodu
EAR99
Jedec95 Code
TO-252AA
Current Continuous Drain Id25
35A Tc
Gate Charge Qg Max Vgs
59nC @ 10V
Fall Time Typ
34 ns
Drive Voltage Max Rds On Min Rds On
10V
Parça Durumu
Active
Tepe Reflow Sıcaklığı (°C)
260
Rise Time
42ns
Montaj Tipi
Surface Mount
Yükseklik
2.26mm
Element Configuration
Single
Terminal Sayısı
2
Montaj
Surface Mount
Jesd30 Code
R-PSSO-G2
Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
Vgsth Max Id
4V @ 50μA
Ambalaj
Tape & Reel (TR)
JESD-609 Kodu
e3
Seri
HEXFET®
Drain To Source Breakdown Voltage
100V
Power Dissipation Max
91W Tc
Genişlik
6.22mm
Transistor Application
SWITCHING
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Kurşunsuz
Lead Free
RoHS Durumu
ROHS3 Compliant
Radyasyon Dayanımı
No
Drainsource On Resistancemax
0.0285Ohm
Power Dissipation
91W
Vgs Max
±20V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Pulsed Drain Currentmax Idm
140A

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