IRFR4615TRLPBF

Specifications

Drain To Source Breakdown Voltage

150V

Seri

HEXFET®

Power Dissipation Max

144W Tc

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Genişlik

6.22mm

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Power Dissipation

144W

Drainsource On Resistancemax

0.042Ohm

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Vgs Max

±20V

Turn Off Delay Time

25 ns

Rds On Max Id Vgs

42m Ω @ 21A, 10V

Number Of Elements

1

Turn On Delay Time

15 ns

Input Capacitance Ciss Max Vds

1750pF @ 50V

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Nominal Vgs

5 V

Transistor Element Material

SILICON

Case Connection

DRAIN

Continuous Drain Current Id

33A

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

30

Uzunluk

6.7056mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Jedec95 Code

TO-252AA

Configuration

SINGLE WITH BUILT-IN DIODE

Yayın Yılı

2004

Gate Charge Qg Max Vgs

26nC @ 10V

Reach Svhc

No SVHC