Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Pulsed Drain Currentmax Idm
- 60A
- Vgs Max
- ±20V
- Additional Feature
- AVALANCHE RATED
- Turn Off Delay Time
- 37 ns
- Contact Plating
- Tin
- Number Of Elements
- 1
- Rds On Max Id Vgs
- 115m Ω @ 10A, 10V
- Input Capacitance Ciss Max Vds
- 640pF @ 25V
- Turn On Delay Time
- 6.4 ns
- Nominal Vgs
- 4 V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 16A
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Power Dissipation Max
- 79W Tc
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 100V
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e3
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application
- SWITCHING
- Genişlik
- 6.22mm
- Kurşunsuz
- Contains Lead, Lead Free
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 52W
- Dual Supply Voltage
- 100V
- Terminal
- SMD/SMT
- Recovery Time
- 190 ns
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fall Time Typ
- 25 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj Tipi
- Surface Mount
- Direnç
- 115mOhm
- Rise Time
- 27ns
- Voltage Rated Dc
- 100V
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