IRFR3711ZTRPBF

Specifications

Power Dissipation

79W

Kurşunsuz

Contains Lead, Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

Genişlik

6.22mm

Power Dissipation Max

79W Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

20V

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Formu

GULL WING

Continuous Drain Current Id

93A

Case Connection

DRAIN

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2160pF @ 10V

Turn On Delay Time

12 ns

Turn Off Delay Time

15 ns

Number Of Elements

1

Rds On Max Id Vgs

5.7m Ω @ 15A, 10V

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Gate Charge Qg Max Vgs

27nC @ 4.5V

Current Continuous Drain Id25

93A Tc

Jedec95 Code

TO-252AA

ECCN Kodu

EAR99

Yayın Yılı

2004

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.7056mm

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Fet Type

N-Channel

Akım Değeri

93A

Tepe Reflow Süresi (maks. sn)

30

Vgsth Max Id

2.45V @ 250μA

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier