IRFR3711ZPBF

Specifications

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Turn Off Delay Time

15 ns

Rds On Max Id Vgs

5.7m Ω @ 15A, 10V

Number Of Elements

1

Input Capacitance Ciss Max Vds

2160pF @ 10V

Turn On Delay Time

12 ns

Terminal Formu

GULL WING

Nominal Vgs

2 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Continuous Drain Current Id

93A

Case Connection

DRAIN

Seri

HEXFET®

Drain To Source Breakdown Voltage

20V

Power Dissipation Max

79W Tc

JESD-609 Kodu

e3

Ambalaj

Tube

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Genişlik

6.22mm

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Dual Supply Voltage

20V

Power Dissipation

79W

Terminal

SMD/SMT

Parça Durumu

Obsolete

Recovery Time

28 ns

Fall Time Typ

5.2 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Direnç

5.7MOhm

Rise Time

13ns

Voltage Rated Dc

20V

Yükseklik

2.2606mm

Element Configuration

Single

Vgsth Max Id

2.45V @ 250μA

Terminal Sayısı

2