IRFR3711PBF

Specifications

Genişlik

6.22mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tube

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

20V

Seri

HEXFET®

Power Dissipation Max

2.5W Ta 120W Tc

Drainsource On Resistancemax

0.0065Ohm

Power Dissipation

120W

RoHS Durumu

RoHS Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Rds On Max Id Vgs

6.5m Ω @ 15A, 10V

Number Of Elements

1

Turn Off Delay Time

17 ns

Vgs Max

±20V

Pulsed Drain Currentmax Idm

440A

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Transistor Element Material

SILICON

Case Connection

DRAIN

Continuous Drain Current Id

110A

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Nominal Vgs

3 V

Turn On Delay Time

12 ns

Input Capacitance Ciss Max Vds

2980pF @ 10V

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Uzunluk

6.7056mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Akım Değeri

110A

Fet Type

N-Channel

Current Continuous Drain Id25

100A Tc

Gate Charge Qg Max Vgs

44nC @ 4.5V

Reach Svhc

No SVHC

Yayın Yılı

2004

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-252AA