Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- RoHS Durumu
- RoHS Compliant
- Dual Supply Voltage
- 55V
- Power Dissipation
- 140W
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 55V
- Power Dissipation Max
- 140W Tc
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Genişlik
- 6.22mm
- Input Capacitance Ciss Max Vds
- 2030pF @ 25V
- Turn On Delay Time
- 13 ns
- Terminal Formu
- GULL WING
- Nominal Vgs
- 4 V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 71A
- Case Connection
- DRAIN
- Pulsed Drain Currentmax Idm
- 280A
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Vgs Max
- ±20V
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Turn Off Delay Time
- 43 ns
- Contact Plating
- Tin
- Rds On Max Id Vgs
- 13m Ω @ 30A, 10V
- Number Of Elements
- 1
- ECCN Kodu
- EAR99
- Jedec95 Code
- TO-252AA
- Yayın Yılı
- 2002
- Gate Charge Qg Max Vgs
- 93nC @ 10V
- Reach Svhc
- No SVHC
- Current Continuous Drain Id25
- 30A Tc
- Akım Değeri
- 71A
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- 30
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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