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IRFR2905ZTRPBF

Infineon Technologies

IRFR2905ZTRPBF

Single MOSFETs Transistors

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Specifications

Yükseklik
2.39mm
Avalanche Energy Rating Eas
82 mJ
Element Configuration
Single
Threshold Voltage
4V
Voltage Rated Dc
55V
Terminal Sayısı
2
Montaj
Surface Mount
Jesd30 Code
R-PSSO-G2
Vgsth Max Id
4V @ 250μA
Fall Time Typ
35 ns
Drive Voltage Max Rds On Min Rds On
10V
Parça Durumu
Active
Tepe Reflow Sıcaklığı (°C)
260
Rise Time
66ns
Montaj Tipi
Surface Mount
Direnç
14.5MOhm
Yayın Yılı
2010
ECCN Kodu
EAR99
Jedec95 Code
TO-252AA
Current Continuous Drain Id25
42A Tc
Max Junction Temperature Tj
175°C
Gate Charge Qg Max Vgs
44nC @ 10V
Reach Svhc
No SVHC
Tepe Reflow Süresi (maks. sn)
30
Akım Değeri
42A
Fet Type
N-Channel
Fabrika Tedarik Süresi
12 Weeks
Operating Mode
ENHANCEMENT MODE
Nem Hassasiyeti (MSL)
1 (Unlimited)
Uzunluk
6.7056mm
Input Capacitance Ciss Max Vds
1380pF @ 25V
Turn On Delay Time
14 ns
Transistor Element Material
SILICON
Continuous Drain Current Id
59A
Case Connection
DRAIN
Terminal Formu
GULL WING
Nominal Vgs
4 V
Çalışma Sıcaklığı
-55°C~175°C TJ
Vgs Max
±20V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

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