IRFR2607ZTRPBF

Specifications

Input Capacitance Ciss Max Vds

1440pF @ 25V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

96 mJ

REACH Uyumluluk Kodu

not_compliant

Terminal Formu

GULL WING

Operating Temperature Max

175°C

Vgsth Max Id

4V @ 50μA

Transistor Element Material

SILICON

Power Dissipationmax Abs

110W

Terminal Sayısı

2

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Tepe Reflow Sıcaklığı (°C)

260

Pulsed Drain Currentmax Idm

180A

Parça Durumu

Active

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

22m Ω @ 30A, 10V

Number Of Elements

1

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-252AA

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Yayın Yılı

2004

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

51nC @ 10V

Drainsource On Resistancemax

0.022Ohm

Current Continuous Drain Id25

42A Tc

Seri

HEXFET®

Fet Type

N-Channel

Drain To Source Voltage Vdss

75V

Tepe Reflow Süresi (maks. sn)

30

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ds Breakdown Voltagemin

75V