IRFR2405TRPBF

Specifications

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 250μA

Transistor Element Material

SILICON

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

2430pF @ 25V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

130 mJ

REACH Uyumluluk Kodu

not_compliant

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

16m Ω @ 34A, 10V

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Pulsed Drain Currentmax Idm

220A

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

110nC @ 10V

Drainsource On Resistancemax

0.016Ohm

Current Continuous Drain Id25

56A Tc

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-252AA

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Yayın Yılı

2000

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

55V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

12 Weeks

Drain Currentmax Abs Id

30A

Operating Mode

ENHANCEMENT MODE

Seri

HEXFET®

Power Dissipation Max

110W Tc