IRFR18N15DPBF

Specifications

Yayın Yılı

2000

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-252AA

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.125Ohm

Current Continuous Drain Id25

18A Tc

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

43nC @ 10V

Tepe Reflow Süresi (maks. sn)

30

Ambalaj

Tube

JESD-609 Kodu

e3

Fet Type

N-Channel

Power Dissipation Max

110W Tc

Drain To Source Voltage Vdss

150V

Seri

HEXFET®

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

18A

Fabrika Tedarik Süresi

12 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ds Breakdown Voltagemin

150V

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

200 mJ

REACH Uyumluluk Kodu

not_compliant

Input Capacitance Ciss Max Vds

900pF @ 25V

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

5.5V @ 250μA

Terminal Formu

GULL WING

Vgs Max

±30V

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

260

Pulsed Drain Currentmax Idm

72A