IRFR1010ZTRPBF

Specifications

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Vgs Max

±20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn Off Delay Time

42 ns

Rds On Max Id Vgs

7.5m Ω @ 42A, 10V

Number Of Elements

1

Turn On Delay Time

17 ns

Input Capacitance Ciss Max Vds

2840pF @ 25V

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Case Connection

DRAIN

Continuous Drain Current Id

91A

Drain To Source Breakdown Voltage

55V

Seri

HEXFET®

Power Dissipation Max

140W Tc

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Genişlik

6.22mm

Drain Currentmax Abs Id

42A

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Power Dissipation

140W

Drainsource On Resistancemax

0.0075Ohm

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Fall Time Typ

48 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Rise Time

76ns

Yükseklik

2.3876mm

Avalanche Energy Rating Eas

220 mJ

Vgsth Max Id

4V @ 100μA

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2