Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- -23A
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Nominal Vgs
- -4 V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Input Capacitance Ciss Max Vds
- 1300pF @ 25V
- Turn On Delay Time
- 15 ns
- Number Of Elements
- 1
- Rds On Max Id Vgs
- 117m Ω @ 13A, 10V
- Turn Off Delay Time
- 51 ns
- Vgs Max
- ±20V
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Pulsed Drain Currentmax Idm
- 76A
- Terminal
- Through Hole
- Power Dissipation
- 120W
- Dual Supply Voltage
- -100V
- Kurşunsuz
- Contains Lead, Lead Free
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Genişlik
- 5.3mm
- Kılıf / Paket
- TO-247-3
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Ambalaj
- Bulk
- Power Dissipation Max
- 140W Tc
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- -100V
- Montaj
- Through Hole
- Terminal Kaplaması
- MATTE TIN OVER NICKEL
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Element Configuration
- Single
- Threshold Voltage
- -4V
- Yükseklik
- 20.3mm
- Voltage Rated Dc
- -100V
- Rise Time
- 67ns
- Montaj Tipi
- Through Hole
- Direnç
- 117mOhm
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