Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 97A
- Case Connection
- DRAIN
- Nominal Vgs
- 4 V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Input Capacitance Ciss Max Vds
- 4820pF @ 50V
- Turn On Delay Time
- 16 ns
- Rds On Max Id Vgs
- 9m Ω @ 58A, 10V
- Number Of Elements
- 1
- Turn Off Delay Time
- 43 ns
- Vgs Max
- ±20V
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Terminal
- Through Hole
- Drainsource On Resistancemax
- 0.009Ohm
- Dual Supply Voltage
- 100V
- Power Dissipation
- 230W
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Genişlik
- 5.3086mm
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-247-3
- Ambalaj
- Bulk
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 100V
- Power Dissipation Max
- 230W Tc
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Vgsth Max Id
- 4V @ 150μA
- Yükseklik
- 20.7mm
- Element Configuration
- Single
- Avalanche Energy Rating Eas
- 242 mJ
- Threshold Voltage
- 4V
- Rise Time
- 52ns
- Montaj Tipi
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 57 ns
- Parça Durumu
- Obsolete
- Recovery Time
- 57 ns
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