Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Bulk
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 250V
- Power Dissipation Max
- 360W Tc
- Genişlik
- 5.3mm
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-247-3
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Terminal
- Through Hole
- Dual Supply Voltage
- 250V
- Power Dissipation
- 120mW
- Vgs Max
- ±30V
- Additional Feature
- ULTRA LOW ON-RESISTANCE
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 30V
- Rds On Max Id Vgs
- 33m Ω @ 35A, 10V
- Number Of Elements
- 1
- Contact Plating
- Tin
- Input Capacitance Ciss Max Vds
- 5860pF @ 25V
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 57A
- Case Connection
- DRAIN
- Nominal Vgs
- 5 V
- Çalışma Sıcaklığı
- -40°C~175°C TJ
- Akım Değeri
- 57A
- Fet Type
- N-Channel
- Fabrika Tedarik Süresi
- 12 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 15.875mm
- Yayın Yılı
- 2006
- ECCN Kodu
- EAR99
- Jedec95 Code
- TO-247AC
- Current Continuous Drain Id25
- 57A Tc
- Gate Charge Qg Max Vgs
- 150nC @ 10V
- Reach Svhc
- No SVHC
- Drive Voltage Max Rds On Min Rds On
- 10V
- Parça Durumu
- Active
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