Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- FAST SWITCHING
- Vgs Max
- ±30V
- Gate To Source Voltage Vgs
- 30V
- Pin Sayısı
- 3
- Pulsed Drain Currentmax Idm
- 260A
- Number Of Elements
- 1
- Rds On Max Id Vgs
- 25m Ω @ 46A, 10V
- Contact Plating
- Tin
- Turn Off Delay Time
- 21 ns
- Turn On Delay Time
- 33 ns
- Input Capacitance Ciss Max Vds
- 4600pF @ 25V
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 65A
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -40°C~175°C TJ
- Nominal Vgs
- 5 V
- Ambalaj
- Tube
- Power Dissipation Max
- 330W Tc
- Drain To Source Breakdown Voltage
- 200V
- Seri
- HEXFET®
- Genişlik
- 5.3086mm
- Kılıf / Paket
- TO-247-3
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Terminal
- Through Hole
- Power Dissipation
- 330W
- Dual Supply Voltage
- 240V
- Fall Time Typ
- 31 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Recovery Time
- 150 ns
- Parça Durumu
- Active
- Rise Time
- 20ns
- Direnç
- 25MOhm
- Montaj Tipi
- Through Hole
- Threshold Voltage
- 5V
- Element Configuration
- Single
- Yükseklik
- 20.7mm
- Montaj
- Through Hole
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