IRFP4004PBF

Specifications

Gate Charge Qg Max Vgs

330nC @ 10V

Turn On Delay Time

59 ns

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Uzunluk

15.87mm

Vgsth Max Id

4V @ 250μA

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

40V

Rds On Max Id Vgs

1.7m Ω @ 195A, 10V

Radyasyon Dayanımı

No

Jedec95 Code

TO-247AC

Current Continuous Drain Id25

195A Tc

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Kılıf / Paket

TO-247-3

Threshold Voltage

4V

Direnç

1.7MOhm

Power Dissipation

380W

Genişlik

5.3086mm

Seri

HEXFET®

Yükseklik

20.7mm

Vgs Max

±20V

Continuous Drain Current Id

350A

Avalanche Energy Rating Eas

290 mJ

Rise Time

370ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Power Dissipation Max

380W Tc

Fet Type

N-Channel

Terminal Sayısı

3

Montaj

Through Hole

Turn Off Delay Time

160 ns

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2003

Montaj Tipi

Through Hole

Fall Time Typ

190 ns

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

8920pF @ 25V

Drive Voltage Max Rds On Min Rds On

10V