Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Threshold Voltage
- 4V
- Seri
- HEXFET®
- Genişlik
- 5.3086mm
- Power Dissipation
- 200W
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 43A
- Radyasyon Dayanımı
- No
- Jedec95 Code
- TO-247AC
- Rds On Max Id Vgs
- 42m Ω @ 22A, 10V
- Drain To Source Breakdown Voltage
- 150V
- Current Continuous Drain Id25
- 43A Tc
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 2400pF @ 25V
- Fabrika Tedarik Süresi
- 12 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Case Connection
- DRAIN
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Reach Svhc
- No SVHC
- Rise Time
- 55ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Continuous Drain Current Id
- 43A
- Yükseklik
- 20.7mm
- Power Dissipation Max
- 200W Tc
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Gate To Source Voltage Vgs
- 20V
- Voltage Rated Dc
- 150V
- Element Configuration
- Single
- Fall Time Typ
- 69 ns
- Kılıf / Paket
- TO-247-3
- Direnç
- 42mOhm
- Gate Charge Qg Max Vgs
- 200nC @ 10V
- Turn On Delay Time
- 12 ns
- Dual Supply Voltage
- 150V
- Vgsth Max Id
- 4V @ 250μA
- Uzunluk
- 15.87mm
- Ambalaj
- Bulk
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