Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Rise Time
- 82ns
- Yükseklik
- 24.99mm
- Continuous Drain Current Id
- 200A
- Number Of Channels
- 1
- Power Dissipation Max
- 280W Tc
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Gate To Source Voltage Vgs
- 20V
- Element Configuration
- Single
- Fall Time Typ
- 83 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 6540pF @ 50V
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pulsed Drain Currentmax Idm
- 840A
- Reach Svhc
- No SVHC
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Jedec95 Code
- TO-247AC
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 3m Ω @ 75A, 10V
- Max Junction Temperature Tj
- 175°C
- Drain To Source Breakdown Voltage
- 60V
- Current Continuous Drain Id25
- 120A Tc
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Threshold Voltage
- 4V
- Seri
- HEXFET®
- Power Dissipation
- 280W
- Genişlik
- 5.3086mm
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Turn Off Delay Time
- 55 ns
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2008
- Ambalaj
- Tube
- Parça Durumu
- Active
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