IRFP2907ZPBF

Specifications

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Fabrika Tedarik Süresi

19 Weeks

Input Capacitance Ciss Max Vds

7500pF @ 25V

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

680A

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Power Dissipation Max

310W Tc

Terminal Sayısı

3

Continuous Drain Current Id

90A

Yükseklik

20.7mm

Rise Time

140ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

100 ns

Element Configuration

Single

Voltage Rated Dc

75V

Threshold Voltage

4V

Transistor Element Material

SILICON

Genişlik

5.3086mm

Power Dissipation

310W

Seri

HEXFET®

Akım Değeri

90A

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

90A Tc

Drain To Source Breakdown Voltage

75V

Rds On Max Id Vgs

4.5m Ω @ 90A, 10V

Jedec95 Code

TO-247AC

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Number Of Elements

1

Recovery Time

61 ns

Transistor Application

SWITCHING

Parça Durumu

Not For New Designs

Ambalaj

Tube

Fet Type

N-Channel