IRFP260NPBF

Specifications

Element Configuration

Single

Voltage Rated Dc

200V

Fall Time Typ

48 ns

Tepe Reflow Sıcaklığı (°C)

250

Continuous Drain Current Id

50A

Yükseklik

20.2946mm

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

60ns

Gate To Source Voltage Vgs

20V

Tepe Reflow Süresi (maks. sn)

30

Montaj

Through Hole

Power Dissipation Max

300W Tc

Terminal Sayısı

3

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

200A

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

4057pF @ 25V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Drain To Source Breakdown Voltage

200V

Rds On Max Id Vgs

40m Ω @ 28A, 10V

Jedec95 Code

TO-247AC

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

50A Tc

Pin Sayısı

3

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode

ENHANCEMENT MODE

Akım Değeri

50A

ECCN Kodu

EAR99

Power Dissipation

300W

Genişlik

5.3mm

Terminal

Through Hole

Seri

HEXFET®

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Threshold Voltage

4V

Turn Off Delay Time

55 ns

Nominal Vgs

4 V