Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 180nC @ 10V
- Turn On Delay Time
- 12 ns
- Uzunluk
- 15.87mm
- Dual Supply Voltage
- 55V
- Vgsth Max Id
- 4V @ 250μA
- Kılıf / Paket
- TO-247-3
- Direnç
- 5.3Ohm
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Turn Off Delay Time
- 140 ns
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2003
- Nominal Vgs
- 4 V
- Transistor Application
- SWITCHING
- Ambalaj
- Tube
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 95A
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 5.3m Ω @ 95A, 10V
- Drain To Source Breakdown Voltage
- 55V
- Jedec95 Code
- TO-247AC
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 95A Tc
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Threshold Voltage
- 4V
- Power Dissipation
- 310W
- Genişlik
- 5.3086mm
- Seri
- HEXFET®
- Yükseklik
- 20.7mm
- Continuous Drain Current Id
- 95A
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Rise Time
- 160ns
- Gate To Source Voltage Vgs
- 20V
- Power Dissipation Max
- 310W Tc
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