IRFML8244TRPBF

Specifications

Pulsed Drain Currentmax Idm

24A

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

430pF @ 10V

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Element Configuration

Single

Fall Time Typ

2.9 ns

Rise Time

2.1ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

5.8A

Yükseklik

1.02mm

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipation Max

1.25W Ta

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Seri

HEXFET®

Genişlik

1.4mm

Power Dissipation

1.25W

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Threshold Voltage

1.7V

Radyasyon Dayanımı

No

Rds On Max Id Vgs

24m Ω @ 5.8A, 10V

Drain To Source Breakdown Voltage

25V

Current Continuous Drain Id25

5.8A Ta

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

3

Terminal Formu

GULL WING

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Transistor Application

SWITCHING

Recovery Time

17 ns

Number Of Elements

1

Kurşunsuz

Lead Free

Manufacturer Package Identifier

Micro3