Volume pricing
- 1+ pcs$0.27
- 10+ pcs$0.26
- 100+ pcs$0.24
- 500+ pcs$0.23
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Threshold Voltage
- 5V
- Seri
- HEXFET®
- Power Dissipation
- 2.8W
- Genişlik
- 3.7mm
- Terminal Kaplaması
- Matte Tin (Sn)
- Pin Sayısı
- 3
- Terminal Formu
- GULL WING
- ECCN Kodu
- EAR99
- Akım Değeri
- 2.6A
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 185m Ω @ 1.6A, 10V
- Max Junction Temperature Tj
- 150°C
- Drain To Source Breakdown Voltage
- 150V
- Current Continuous Drain Id25
- 2.6A Ta
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 420pF @ 25V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Case Connection
- DRAIN
- Reach Svhc
- No SVHC
- Rise Time
- 21ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 2.6A
- Yükseklik
- 1.8mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Channels
- 1
- Power Dissipation Max
- 2.8W Ta
- Terminal Sayısı
- 4
- Tepe Reflow Süresi (maks. sn)
- 30
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 30V
- Voltage Rated Dc
- 150V
- Element Configuration
- Single
- Fall Time Typ
- 19 ns
- Kılıf / Paket
- TO-261-4, TO-261AA
- Direnç
- 185Ohm
- Jesd30 Code
- R-PDSO-G4
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