IRFL4105TRPBF

Specifications

Gate Charge Qg Max Vgs

35nC @ 10V

Turn On Delay Time

7.1 ns

Uzunluk

6.6802mm

Vgsth Max Id

4V @ 250μA

Dual Supply Voltage

55V

Kılıf / Paket

TO-261-4, TO-261AA

Jesd30 Code

R-PDSO-G4

Direnç

45mOhm

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

19 ns

Yayın Yılı

1999

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Nominal Vgs

4 V

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Kurşunsuz

Contains Lead, Lead Free

Number Of Elements

1

Recovery Time

82 ns

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Akım Değeri

3.7A

Terminal Formu

GULL WING

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

55V

Max Junction Temperature Tj

150°C

Rds On Max Id Vgs

45m Ω @ 3.7A, 10V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

3.7A Ta

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Threshold Voltage

4V

Genişlik

3.7mm

Power Dissipation

2.1W

Terminal

SMD/SMT

Seri

HEXFET®

Continuous Drain Current Id

3.7A