IRFIZ48NPBF

Specifications

Gate Charge Qg Max Vgs

89nC @ 10V

Turn On Delay Time

11 ns

Uzunluk

10.6172mm

Vgsth Max Id

4V @ 250μA

Kılıf / Paket

TO-220-3 Full Pack

Vgs Max

±20V

Avalanche Energy Rating Eas

270 mJ

Fet Type

N-Channel

Turn Off Delay Time

32 ns

Drain Currentmax Abs Id

40A

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

1996

Nominal Vgs

4 V

Transistor Application

SWITCHING

Ambalaj

Tube

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Recovery Time

140 ns

Number Of Elements

1

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Akım Değeri

36A

ECCN Kodu

EAR99

Rds On Max Id Vgs

16m Ω @ 22A, 10V

Drain To Source Breakdown Voltage

55V

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Current Continuous Drain Id25

40A Tc

RoHS Durumu

ROHS3 Compliant

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Power Dissipation

42W

Genişlik

4.826mm

Seri

HEXFET®

Yükseklik

9.8mm

Continuous Drain Current Id

36A

Rise Time

78ns

Çalışma Sıcaklığı

-55°C~175°C TJ